2SD1658 2003-02-04 1 toshiba transistor silicon npn epitaxial type (darlington power transistor) 2SD1658 micro motor drive, hammer drive applications switching applications power amplifier applications high dc current gain: h fe = 2000 (min) (v ce = 2 v, i c = 1 a) low saturation voltage: v ce (sat) = 1.5 v (max) (i c = 1 a, i b = 1 ma) zener diode included between collector and base. maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 60 10 v collector-emitter voltage v ceo 60 10 v emitter-base voltage v ebo 8 v collector current i c 2 a base current i b 0.5 a ta = 25c 1.5 collector power dissipation tc = 25c p c 10 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-8h1a weight: 0.82 g (typ.) base emitter 4 k ? 800 ? collector
2SD1658 2003-02-04 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 45 v, i e = 0 D D 10 a emitter cut-off current i ebo v eb = 8 v, i c = 0 D D 4 ma collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 50 60 70 v dc current gain h fe v ce = 2 v, i c = 1 a 2000 D D collector-emitter saturation voltage v ce (sat) i c = 1 a, i b = 1 ma D D 1.5 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 1 ma D D 2.0 v transition frequency f t v ce = 2 v, i c = 0.5 a D 100 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 20 D pf turn-on time t on D 0.4 D storage time t stg D 4.0 D switching time fall time t f i b1 = ? i b2 = 1 ma, duty cycle 1% D 0.6 D s marking explanation of lot no. i b1 20 s i b2 v cc = 30 v output 30 ? i b2 i b1 input product no. d1658 lot no. month of manufacture (january to december are denoted by letters a to l respectively.) year of manufacture (last decimal digit of the year of manufacture)
2SD1658 2003-02-04 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) h fe ? i c collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) base-emitter voltage v be (v) i c ? v be collector current i c (a) ambient temperature ta (c) p c ? ta collector power dissipation p c (w) collector current i c (a) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) 8 14 4 12 0 0 (1) tc = ta infinite heat sink (2) no heat sink 80 120 40 200 160 (1) (2) 0 0 0.8 1.6 2 4 6 8 common emitter tc = 25c i b = 170 a 180 185 175 0 250 500 200 10 0.4 1.2 2.0 dc current gain h fe 10000 0.01 30 500 1000 3000 5000 0.03 0.1 0.3 1 5 tc = 100c 25 ? 55 common emitter v ce = 2 v 3 50 100 300 0.3 3 tc = ? 55c 100 25 common emitter i c /i b = 1000 1 1 3 0.6 0 0 0.8 1.6 0.8 1.6 2.4 3.2 common emitter v ce = 2 v tc = 100c 25 ? 55 4.0 0.4 1.2 2.0 1 3 common emitter i c /i b = 1000 tc = ? 55c 25 100 1 3 5 0.3
2SD1658 2003-02-04 4 collector-emitter voltage v ce (v) safe operating area collector current i c (a) 10 30 0.01 1 5 0.05 0.1 0.3 0.5 1 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulsed)* v ceo max 1 ms* 10 ms* 100 s* dc operation tc = 25c 100 3 3 0.03
2SD1658 2003-02-04 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
|
